Typical Electrical Characteristics (continued)
1.12
5
1.08
I D = 250μA
1
V GS = 0V
T J = 125°C
1.04
1
0.96
0.1
0.01
0.001
25°C
-55°C
0.92
-50
-25
0
25
50
75
100
125
150
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
T J , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature .
500
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation with
Source Current and Temperature .
10
I D = 1.6A
V DS = 5V
300
200
C iss
8
15V
10V
6
100
C oss
4
60
40
f = 1 MHz
V GS = 0V
C rss
2
20
0.1
0.2
0.5
1
2
5
10
20
30
0
0
2
4
6
8
V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 9. Capacitance Characteristics .
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics .
V DD
t on
t off
V IN
D
R L
V OUT
t d(on)
t r
90%
t d(off)
90%
t f
V GS
R GEN
G
DUT
V OUT
10%
10%
INVERTED
90%
S
V IN
50%
50%
10%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms .
NDS355AN Rev.C
相关PDF资料
NDS355N MOSFET N-CH 30V 1.6A SSOT3
NDS7002A MOSFET N-CH 60V 280MA SOT-23
NDS8425 MOSFET N-CH 20V 7.4A 8SOIC
NDS8434 MOSFET P-CH 20V 6.5A 8-SOIC
NDS8947 MOSFET 2P-CH 30V 4A 8-SOIC
NDS9400A MOSFET P-CH 30V 3.4A 8-SOIC
NDS9407 MOSFET P-CH 60V 3A 8-SOIC
NDS9945 MOSFET 2N-CH 60V 3.5A 8-SOIC
相关代理商/技术参数
NDS355AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
NDS355AN 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET 30V 1.7A ((NW)) 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, 30V, 1.7A, SUPER SOT-3
NDS355AN_G 制造商:Fairchild Semiconductor Corporation 功能描述:N-Channel 30 V 0.085 Ohm Logic Level Enhance Mode Field Effect Transistor-SSOT-3
NDS355AN_Q 功能描述:MOSFET N-Channel Logic RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS355AN-CUT TAPE 制造商:FAIRCHILD 功能描述:N-Channel 30 V 0.085 Ohm Logic Level Enhance Mode Field Effect Transistor-SSOT-3
NDS355N 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS355N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
NDS355N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET